Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

ABSTRACT

A semiconductor device manufacturing apparatus which uses a thermal CVD reaction to deposit a film onto a substrate has a ring with an electrode terminal that makes contact with either the substrate or the deposited film thereon, a power supply that applies a current or a potential to this electrode terminal of the ring, and a piston cylinder mechanism for moving the ring up and down, so as to cause its electrode terminal to make and break contact with the substrate or deposited film thereon.

CROSS-REFERENCE TO RELATED APPLICATION

This Application is a divisional of U.S. application Ser. No.10/626,233, filed Jul. 24, 2003 now U.S. Pat No. 7,220,318, which inturn is a divisional of U.S. application Ser. No. 09/273,627, filed Mar.23, 1999, now U.S. Pat. No. 6,670,270.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an apparatus for manufacturing and amethod for manufacturing a semiconductor device, and more particularlyto a semiconductor device manufacturing apparatus and method for thepurpose of forming, using a thermal CVD (chemical vapor deposition)method to form on a substrate a metallic film such as a film of copperor aluminum, a high dielectric coefficient layer such as a layer oftitanium oxide strontium, and a ferroelectric film such as BST or TZT.

2. Description of the Related Art

In general, in fabricating a wire (a so-called damascene copper wire) byburying copper in a trench of a wiring pattern, a thermal CYD apparatusis used to deposit copper onto the substrate. FIG. 6 shows a generalview of a thermal CVD apparatus in the past.

As shown in FIG. 9, a thermal CVD apparatus in the past has a hollowvacuum chamber 60, a vacuum pump 61 such as a turbomolecular pump forthe purpose of exhausting the inside of the vacuum chamber 60 to avacuum condition, a substrate holder 62, provided within the vacuumchamber 60, which holds a substrate W, a vaporizer 63 which atomizes thecopper to be deposited on the substrate W as the raw gas, and a feedport 64 for the purpose of supplying the raw gas from the vaporizer 63to within the vacuum chamber 60.

The substrate holder 62 has a substrate heating mechanism which iscapable of controlling the temperature of the substrate W to within therange from 100° C. to 400° C. When depositing copper, the temperature iscontrolled to approximately 200° C.

Next, the method of depositing a copper film for the purpose of forminga copper wire using a thermal CVD apparatus of the past will bedescribed. First, a trench is formed in the region in which a wire is tobe formed on the silicon oxide film of the semiconductor substrate W.

Next, the above-noted substrate W is supported on top of the substrateholder 62 of the thermal CVD apparatus. The inside of the vacuum chamber60 is brought to a vacuum condition beforehand by the vacuum pump 61.

Next, the substrate heating mechanism of the substrate holder 62 iscaused to operate, so as to heat the substrate to a prescribedtemperature. Simultaneously with this action, the Cu(hfac) (tmvs) rawgas, which has been vaporized by the vaporizer 63 is supplied to thesupply port 64, together with a hydrogen carrier gas, and a copper filmof a prescribed thickness is deposited onto the substrate W.

Then, using a CMP (chemical mechanical polishing) method, the depositedcopper film is polished, so that copper remains only within the trench,thereby forming the copper wire.

In the Japanese Examined Patent Publication(KOKOKU) No. 1-19467 and theJapanese Unexamined Patent Publication (KOKAI)No. 2-119125 and in theJapanese Unexamined Patent Publications (KOKAI) Nos. 3-97871 and3-257099, there is technology disclosed directed to the application of avoltage to a substrate holder that holds a substrate in a plasma CVDapparatus.

The major reaction of the above-described copper deposition reaction ischiefly the disproportionate reaction2Cu⁺¹(hfac)(tmvs)−>Cu⁰+Cu⁺²(hfac)₂+2(tmvs).

The rate of this reaction is established by the absorption of the 2 Cu⁺¹(hfac) molecules at the deposition surface and the movement of chargeand removal of reaction products.

The driving forces of these rate-determining reactions are such thingsas the thermal energy according to the temperature of the substratesurface, and the amount of raw gas that is supplied, and it is difficultto improve the rate of reaction by means of these quantities.

The above-noted disproportionate reaction is, in principle, a reversiblereaction, and it is thought that there is a limit to the control of thedirection of the reaction by means of isotropic heat.

In formation of a copper wire using a thermal CVD apparatus of the past,in order to improve coverage it was necessary to lower the substratetemperature, which causes the rate of copper deposition to become slow(for example, 20 nm/minute). As a result, the time for fabrication ofthe semiconductor device becomes long, this resulting in a drop inproductivity.

In the method of the past, because it was not possible to control thecrystal orientation in the film that was formed, it was difficult todeposit a film having good quality with polarity alignment.

Additionally, in order to improve the reliability of the copper wires,it is necessary to control the grain growth in the copper film. With themethod of the past, however, it was difficult to control grain growth.

In the plasma CVD apparatus technology that was disclosed in theabove-noted Japanese Patent Publications, a bias voltage is applied tothe substrate, and ions such as argon are allowed to collide with thesurface of the substrate, the purpose being to impure the film surfacepurity and step coverage, and improve the flatness of the film surface,this being intrinsically different from the technology of the presentinvention, which uses an electrostatic action or the action of anelectrical current.

Accordingly, it is an object of the present invention to solve theproblems noted above, and to provide an apparatus and method formanufacturing a semiconductor device, whereby it is possible to promotethe deposition of a film and to control the rate of film deposition, thecrystal orientation, and the growth of grains.

SUMMARY OF THE INVENTION

In order to achieve the above-noted object, the present invention hasthe following described technical constitution.

Note that, one aspect of the present invention is that an apparatus formanufacturing a semiconductor device which has a basic technicalconception in that a semiconductor device manufacturing apparatus thatuses a thermal CVD reaction to deposit a film onto a substrate, theapparatus having a power supply means that supplies electric current tothe substrate or the film deposited thereupon.

And a second aspect of the present invention is that a semiconductordevice manufacturing method for depositing a film on a substrate by athermal CVD reaction, wherein the film is deposited on a substrate whilea current is applied to the substrate or film deposited thereupon.

Specifically, an apparatus for manufacturing a semiconductor deviceaccording to the present invention is a semiconductor devicemanufacturing apparatus which uses a thermal CVD reaction to deposit afilm onto a substrate, and which has a power supply that either appliesa current or a potential to a substrate or to a film that is depositedonto the substrate.

An apparatus for manufacturing a semiconductor device according to thepresent invention is a semiconductor device manufacturing apparatuswhich uses a thermal CVD reaction to deposit a film onto a substrate,this apparatus having a supporting means on which the electrode terminalunits are supported, comprising, for example, a rectangular or a ringlike frame as well as a plate having for example, a rectangular or aring like aperture therein, and which has an electrode terminal thatmakes contact with the substrate or with film that is deposited onto thesubstrate, a power supply that applies either a current or a potentialto the electrode terminal of the ring, and means for moving the ring sothat it makes contact with or is removed from the substrate or with filmthat is deposited onto the substrate.

The above-noted electrode unit supporting means such as the ring, canhave a positive electrode terminal units to which a positive voltage isapplied and a negative electrode terminal to which a negative voltage isapplied, these being disposed in opposition to each other.

A plurality of the above-noted electrode terminal units can be disposedin opposition on a circle that is concentric to the supporting means,for example, the ring, the power supply applying a voltage to eachelectrode terminal unit, independently, a positive voltage being appliedto one and a negative voltage being applied to the other of the opposingelectrode terminal units, and it also being possible to sequentiallyswitch the positive and negative voltages that are applied to adjacentelectrode terminal units.

A semiconductor device manufacturing apparatus according to the presentinvention can also have means for monitoring the potential of thesubstrate or a film that is deposited thereupon, and for controlling thecurrent or voltage or the temperature of the substrate, based on thatpotential.

A semiconductor device manufacturing apparatus according to the presentinvention preferably enables the setting of the potential of thesubstrate or a film that is deposited thereupon to, for example, anarbitrary ground potential or the like.

Another semiconductor device manufacturing apparatus according to thepresent invention is a semiconductor device manufacturing apparatus thatuses a thermal CVD reaction to deposit a film onto a substrate, thisapparatus having means for generating a current or a potential in thesubstrate or a film that is deposited thereupon, without coming intocontact with the substrate or a film that is deposited thereupon.

The above-noted generating means is, for example, a magnetic generatingmeans that applies magnetic flux to the substrate or to a film that isdeposited thereupon.

A method of manufacturing a semiconductor device according to thepresent invention is a semiconductor device manufacturing method wherebya thermal CVD reaction is used to deposit a film onto a substrate,whereby the film is deposited as a current or a potential is applied tothe substrate or to a film that is deposited thereupon.

A method of manufacturing a semiconductor device according to thepresent invention is additionally one in which a thermal CVD reaction isused to deposit a film onto a substrate, whereby the film is depositedas the potential of the substrate or a film deposited thereupon is setto an arbitrary ground potential.

Yet another method of manufacturing a semiconductor device according tothe present invention is one in which a thermal CVD reaction is used todeposit a film onto a substrate, whereby, for example, magnetic flux areapplied so as to apply a current or a potential to the substrate or afilm deposited thereupon, without making contact with the substrate orthe film deposited thereupon.

Yet another method of manufacturing a semiconductor device according tothe present invention has:

(1) a step of depositing a film onto a substrate using a thermal CVDreaction and

(2) a step of depositing a film by using a thermal CVD reaction as acurrent or potential is applied to the deposited film.

Yet another method of manufacturing a semiconductor device according tothe present invention has:

(1) a step of forming a trench on a semiconductor substrate,

(2) a step of depositing a barrier layer for the purpose of preventingfilm diffusion within the trench,

(3) a step of depositing a film onto the barrier layer by using athermal CVD reaction,

(4) a step of depositing a film by using a thermal CVD reaction whileapplying a current or a potential to the deposited film, and

(5) a step of polishing the film and the barrier layer, so as to leavethe film and barrier layer within the trench so as to form a wire.

According to the present invention, by applying a current or a potentialto a substrate or a film that is deposited thereupon, in addition to adisproportionate reaction, a reduction reaction occurs, the depositionof the film is promoted, and it is possible to control the filmdeposition rate, the crystal orientation, and the grain growth.

Additionally, because the present invention can be used to set thepotential of the substrate or a film that is deposited thereupon to, forexample, ground potential, it is possible to obtain a uniform potentialdistribution generated on the surface thereof because of electrostaticchucking, for example.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(A) and 1(B) are drawings that illustrate in simplified form asemiconductor device manufacturing apparatus according to the firstembodiment of the present invention, with FIG. 1(A) showing thecondition in which the electrode terminal of the ring is removed fromthe surface of the substrate and FIG. 1(B) showing the condition inwhich the electrode terminal of the ring is in contact with thesubstrate surface.

FIGS. 2(A)-2(D) are cross-sectional views of the process steps for thepurpose of depositing a copper film and forming a copper wire, accordingto the semiconductor device manufacturing method of the presentinvention.

FIGS. 3(A) and 3(B) are plan views that show in simplified form asemiconductor device manufacturing apparatus according to the secondembodiment of the present invention.

FIG. 4 is a plan view that shows in simplified form a semiconductordevice manufacturing apparatus according to the third embodiment of thepresent invention.

FIG. 5 (A) and (B) are drawings that show in simplified form asemiconductor device manufacturing apparatus according to the fourthembodiment of the present invention.

FIG. 6 is a flow chart that demonstrates a method of depositing a filmonto a substrate while a current or potential is applied across thesubstrate or film, in accordance with one aspect of the presentinvention.

FIG 7. is a flow chart that demonstrates a method of depositing a filmonto a substrate while a current or potential is applied across thesubstrate or film, and the temperature of the substrate or film isvaried, in accordance with another aspect of the present invention.

FIG. 8 is a flow chart that demonstrates a method of depositing a filmonto a substrate while setting the potential applied to the substrate orfilm to a ground potential, in accordance with yet another aspect of thepresent invention.

FIG. 9 shows one of a typical conventional thermal CVD apparatus.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention are described in detail below, withreferences being made to relevant accompanying drawings.

FIGS. 1(A) and 1(B) are drawings that illustrate in simplified form thebasic construction of a semiconductor device manufacturing apparatusaccording to the present invention, in that the apparatus 100 having apower supply means 40 that supplies electric current to the substrate Wor the film F deposited thereupon.

In the semiconductor device manufacturing apparatus 100 of the presentinvention, the power supply means 40 supplies the electric current tothe substrate W or the film F deposited thereupon, either directly orindirectly.

The semiconductor device manufacturing apparatus 100 of the presentinvention, has the power supply means 40 which comprises a power supplysource 9 and an electrode terminal unit 6 which is connected to thepower supply source 9 and to the substrate W or the film F depositedthereupon.

In the present invention, the power supply means 40 further comprises acurrent controlling means 10 which controls the current to be suppliedto the substrate W or the film F deposited thereupon.

In the present invention, the current controlling means 10 can controlthe current to be supplied to the substrate W or the film F depositedthereupon, either continuously or intermittently.

In the present invention, the electrode terminal units 6 may be providedon peripheral area of either the substrate W or a region on which thefilm F is being deposited on the substrate W.

Further in the present invention, the electrode terminal units 6 maycomprise a plurality of pairs of two electrode terminal units 6, andeach one of the pairs comprising two electrode terminal units 6, a firstelectrode terminal unit 6 and a second electrode terminal unit 6 whichbeing oppositely arranged with interposing an area of the substrate W onwhich the film F will be deposited, therebetween.

In the present invention, the current controlling means 10 supplies avoltage to each one of the electrode terminals pair so as to supply avoltage having a first polarity to the first electrode terminal unit ofrespective electrode terminal pairs and to supply a voltage having asecond polarity to the second electrode terminal unit of the electrodeterminal pair, oppositely arranged to the first electrode terminal unit.

Further in the present invention, the current controlling means 10controls the polarity of the voltage applied to each one of theelectrode terminal units 6 of the respective electrode terminal pairs soas to be varied either continuously or intermittently with respect tothe time elapsing.

In the semiconductor device manufacturing apparatus 100 of the presentinvention, the current controlling means 10 can control the polarity ofthe voltage applied to each one of the electrode terminal units 6 of therespective electrode terminal pairs so that the polarity of the voltageapplied to one of the electrode terminal units in the respective pairsdiffers from that applied to separate electrode terminal pair adjacentlyarranged thereto, either continuously or intermittently with respect tothe time elapsing.

The current controlling means 10 may control the voltage applied to atleast one of the electrode terminal units 6 so as to change the voltagevalue, either continuously or intermittently with respect to the timeelapsing.

On the other hand, the current controlling means 10 also may control thepolarity of the voltage applied to each one of the electrode terminalunits 6 so as to change a direction of the current flowed through thesubstrate W.

The current controlling means 10 further may include a detecting means43 for detecting either one of current and voltage applied to thesubstrate W or the film F deposited thereupon whereby the currentcontrolling means 10 may control the value of either the current or thevoltage in response to a result of the detecting means 43.

While, the apparatus 100 of the present invention, it is furtherprovided with a temperature controlling means 42 for controlling thetemperature of the electrode terminal units 6 and wherein the currentcontrolling means 10 may further include a detecting means 43 fordetecting either one of current and voltage applied to the substrate Wor the film F deposited thereupon whereby the temperature controllingmeans 42 controls a temperature of the substrate W and/or a film Fdeposited on the substrate so as to change a temperature of thesubstrate or the film deposited thereupon, in response to a result ofthe detecting means.

The semiconductor device manufacturing apparatus 100 of the presentinvention, the power supply means 40 is further provided with anelectrode terminal units moving means 7 which supports the plurality ofelectrode terminal units 6, changes a respective position of theelectrode terminal unit 6 with respect to a main surface of thesubstrate W or the film F deposited thereupon.

The semiconductor device manufacturing apparatus 100 of the presentinvention, the electrode terminal units moving means 7, i.e., asupporting means for supporting the electrode terminal units, maycontrol to set the electrode terminal units 6 either at a first positionat which the electrode terminal units are contacted to the substrate orthe film deposited thereupon or at a second position at which theelectrode terminal units are not contacted thereto.

Next, a first embodiment of the present invention will be explainedhereunder with referring to FIGS. 1(A) and 1(B).

FIG. 1(A) and FIG. 1(B) show simplified views that illustrate the firstembodiment of a semiconductor device manufacturing apparatus accordingto the present invention, with (A) showing the condition in which theelectrode terminal of the ring is removed from the surface of thesubstrate and (B) showing the condition in which the electrode terminalof the ring is in contact with the substrate surface.

As shown in FIGS. 1(A) and 1(B), the thermal CVD apparatus according tothe present invention has a hollow vacuum chamber 1, a vacuum pump 2,such as a turbomolecular pump, for the purpose of establishing a vacuumcondition inside the vacuum chamber 1, a substrate holder 3 forsupporting the substrate W, this being provided within the vacuumchamber 1, an atomizer 4 that atomizes the copper to be deposited ontothe substrate into the raw gas, a supply port 5 for the purpose ofsupplying the raw gas from the atomizer 4 to within the vacuum chamber1, a ring 7 that has an electrode terminal unit 6 that makes contactwith the surface of the substrate W, a piston cylinder apparatus 8 whichmoves the ring up and down, and a power supply source 9, which iselectrically connected to the electrode terminal unit 6, for the purposeof changing the potential of the surface of the substrate W or supplyinga current thereto, via the electrode terminal unit 6.

The substrate holder 3 has a substrate heating mechanism that cancontrol the temperature of the substrate W within the range 100° C. and400° C. When depositing copper, the temperature is controlled toapproximately 200° C.

The ring 7 is made of an insulating material, such as alumina.

The end of the rod 8 a of the piston cylinder apparatus 8 is mounted tothe bottom surface of the ring 7, so that the extension and retractionof the rod 8 a causes the ring 7 to rise and descend, the result of thismovement being that the electrode terminal unit 6 of the ring 7 makesand breaks its contact with the surface of the substrate W.

The potential and current pattern that is supplied from the power supplysource 9 is variable and can be varied so as to control the depositionof the film.

It is also possible to provide a controller 10, which monitors thepotential of the surface of the substrate W, via the electrode terminalunit 6 of the ring 7, and which controls the amount of current, thepotential, and the temperature of the substrate W.

In the case in which the substrate holder 3 uses an electrostatic chuckto hold the substrate W, an electrical charge is generated on thesubstrate W by virtue of electrostatic induction thereonto, thisresulting in a change in the substrate potential, leading to thepossibility of affecting the CVD reaction.

In such cases, it is preferable to use the controller 10 to control thepotential of the substrate to the ground potential, for example, therebyachieving a uniform potential distribution.

By doing this, it is possible to improve the uniformity andrepeatability of the film.

It is also possible to ground the surface of the substrate W or to setthe substrate potential arbitrarily by using the power supply.

The vaporizer 4 vaporizes Cu (hfac) (tmvs) and hexafluoroacetylacetonate copper trimethyl vinyl silane to serve as the raw gas for theprocess.

The vaporized raw gas is supplied to the surface of the substrate W viathe supply port 5.

FIGS. 2(A)-2(D) are cross-sectional views that show the process stepsfor depositing a copper film and forming a copper wire according to thesemiconductor device manufacturing method of the present invention.

First, as shown in FIG. 2(A), a trench 12 is formed in a location inwhich a wire will be formed on the silicon oxide film 11 of thesemiconductor substrate W.

The formation of the trench 12 is done by using reactive ion etching,for example.

The width of the trench 12 can be varied, ranging from 0.3 μm to 100 μm,and is indicated in this case as being 0.5 μm.

While the depth of the trench 12 will depend on the individual design,this is indicated herein as the example of 0.5 μm.

A barrier layer 13 is formed in the trench 12 to prevent copperdiffusion. The material for the barrier layer 13 can be, for example,Ta, TaN, TiN, WN, or WSIN, and the thickness thereof is approximately 10nm.

Next, the substrate W, onto which is formed the barrier layer 13, isplaced in the vacuum chamber 1 as shown in FIG. 1. The vacuum pump 2 isused to establish a vacuum within the vacuum chamber 1 beforehand.

Next, the substrate heating mechanism of the substrate holder 3 iscaused to operate, so as to heat the substrate W to a prescribedtemperature (of approximately 180° C.

Simultaneously with this, the Cu (hfac) (tmvs), which is the raw gas, issupplied together with hydrogen carrier gas so that, as shown in FIG.2(B), a copper film 14 having a film thickness of 100 nm is deposited.

The pressure of the raw gas is approximately 13 Torr. When doing this,because the rod 8 a of the piston cylinder mechanism 8 is extended, theelectrode terminal unit 6 of the ring 7 is removed from the surface ofthe substrate W (refer to FIG. 1(A)).

The copper deposition reaction when the above is done is chiefly thedisproportionate reaction2Cu⁺¹(hfac)(tmvs)−>Cu⁰+Cu⁺²(hfac)₂+2 (tmvs).

The rate of film growth is approximately 100 nm/minute.

Next, the rod 8 a of the piston cylinder mechanism 8 is caused toretract, so that the electrode terminal unit 6 of the ring 7 comes intocontact with the surface of the copper film 14 that was deposited on thesubstrate (refer to FIG. 1(B)).

A potential of −20 V from the power supply source 9, via the electrodeterminal unit 6, is applied to the surface of the substrate W. By meansof this potential, vapor phase Cu (hfac) is attracted.

Of the Cu (hfac), concentration of electrons and polarization occurbecause of the differences in electron affinity of constituent electronsthereof.

Molecules are attracted to the surface because of electrostaticattraction. At the surface of the substrate W, electron supply occursand, in addition to the disproportionate reaction, the reductionreactions2Cu⁺¹(hfac)+e+H.→Cu⁰+H(hfac)and2Cu⁺²+2(hfac)₂+2e+H₂→Cu⁰+2H(hfac)occur, so that the deposition of copper is promoted.

The hydrogen in these reactions is supplied into the vacuum chamber 1 asa carrier for the Cu (hfac) (tmvs).

The rate of deposition under these conditions is 150 nm/minute. Theaction of the potential causes orientation of the crystal in thedirection of the electrical field.

Thus, as shown in FIG. 2(C), a copper film 15, having a film thicknessof 700 nm, is deposited.

Then, as shown in FIG. 2(D), CMP (chemical mechanical polishing) is usedto polish the copper films 14 and 15 and the barrier layer 13, so thatthe copper films 14 and 15 and the barrier layer 13 remain only withinthe trench 12, this forming the copper wire 16.

In this embodiment of the present invention, the first step ofdepositing a copper film with no current supplied is separate from asecond step of depositing a copper film while supplying a current. Thecopper that is deposited in the first step serves as a seed layer forthe purpose of supplying a uniform potential distribution.

It is also possible to cause the electrode terminal unit 6 of the ring 7to come into contact with the barrier layer 13 from the beginning fordeposit of a copper film, in which case, because the potentialdistribution within the substrate surface is determined by theresistance of the barrier layer 13, to achieve a uniform potentialdistribution, it is necessary to use a barrier layer 13 with a lowresistance (such as a pure metal like Ta or Nb).

Additionally, the potential that is supplied from the power supplysource 9 need not be constant and can, for example, be an alternatingcurrent which changes direction at a fixed frequency. In the case ofapplying an alternating current, the Cu (hfac) molecules in the vaporphase that have a polarity are attracted or repelled, or are caused torotate by an electrical force.

By selecting an appropriate AC frequency, it is possible to control theorientation and the deposition rate.

FIGS. 3(A) and 3(B) are plan views that illustrate in simplified formthe second embodiment of a semiconductor manufacturing apparatusaccording to the present invention.

As shown in FIG. 3(A), in the second embodiment the electrode terminalthat is mounted to the ring 7 is made up of four positive electrodeterminals 20 and four negative electrode terminals 21, these electrodeterminals being disposed in opposing manner with a prescribed intervaltherebetween.

The positive electrode terminals 20 and the negative electrode terminals21 can be supplied current from the power supply source 9.

In the second embodiment of the present invention, as shown in FIG. 2(B), a copper film 14 is deposited to a depth of 100 nm on a barrierlayer 13, after which the positive electrode terminals 20 and thenegative electrode terminals 21 are brought into contact with thesurface of the substrate W and a current is caused to flow in thesurface of the substrate W.

In this condition, Cu (hfac) (tmvs) is supplied along with hydrogen, andCVD is performed at a substrate temperature of 180° C.

In general, there is a tendency for surface atoms and molecules whichare attracted to the surface to be, in comparison with atoms in the bulkmaterial, easier to cause to migrate.

This is because of what could be called a quasi-stable condition of thedeposition onto the surface and because, in contrast to the bulkmaterial, the bonds at the surface are not as complete.

Therefore, copper atoms and Cu (hfac) that has been deposited onto thesurface exhibit electromigration because of the action of the currentthat flows in the substrate W.

In conventional thermal deposition, thermal oscillation causes virtuallyrandom migration.

In the case in which a current is flowing in a fixed direction, however,the electrostatic action and the quantum dynamic action known aselectron wind force aid the migration, enabling deposition with a givenorder, in accordance with the direction of current flow.

In accordance with this principle, it is possible to utilize thedirection of current flow to control the orientation of the growth ofthe film.

The potential that is supplied from the power supply source 9 need notbe constant and can, for example, be an alternating current whichchanges direction at a fixed frequency.

The arrangement of the positive electrode terminals 20 and the negativeelectrode terminals 21 is arbitrary, and can also be established so thatthe positive electrode terminals 20 and the negative electrode terminals21 alternate.

The number of positive electrode terminals 20 and the negative electrodeterminals 21 is also arbitrary.

Additionally, it is possible to provide a controller 10 such asdescribed with regard to the first embodiment.

FIG. 3(B) shows another feature of this embodiment in that the electrodeterminal units supporting means 7 has a rectangular configurationinstead of circular configuration as shown in FIG. 3(A).

Note that, a controlling mechanism of this feature as shown in FIG. 3(B)is substantially identical to that as shown in FIG. 3(A).

FIG. 4 is a plan view that shows in simplified form the third embodimentof a semiconductor device manufacturing method according to the presentinvention.

As shown in FIG. 4, in the third embodiment there are eight electrodeterminal units 30 arranged concentrically about the ring 7 at a uniforminterval.

Each of the electrode terminal units 30 is connected independently tothe power supply terminals a through h of the power supply source 9, andhas a voltage applied to it independently.

For example, if a positive voltage is applied in the sequence a→b→c→d,and simultaneously a negative voltage is applied in the sequencee→f→g→h, the direction of current flow between the electrode terminalunits 30 will rotate with a fixed period.

By doing this, an averaged current will flow within the surface of thesubstrate, so that surface atoms and attracted molecules are encouragedto migrate by the current, which is parallel to the substrate surface,this resulting in an imparted directionality, so that a controlled filmis deposited by the action of the current.

More specifically, the migration encourages the diffusion of atoms atthe crystal grain boundaries and encourages grain growth, this havingeffects such as achieving large crystal grains. With large crystalgrains, because the grain boundaries are small, immunity toelectromigration when wiring is formed results in the formation ofhighly reliable wires.

Additionally, a film resulting from grain growth having directionalitythat is imparted by a current that is parallel to the substrate surfaceis in a stable energy state under this current stress.

Current flowing after the formation of the wires also flows in parallelto the substrate surface, in the same plane as current stress during thegrowth of the film.

As described above, the film is deposited in a manner so that it is inthe most energy stable condition under current stress, and is in anenergy stable condition even when current is flowing in the wiring.Because of this, it is possible to achieve a film that is immune tocurrent stress.

The potential that is supplied from the power supply source 9 need notbe constant and can, for example, be an alternating current whichchanges direction at a fixed frequency.

The number and arrangement of the electrode terminal units 30 are alsoarbitrary and, as noted for the first embodiment, it is possible toprovide a current controller 10.

FIGS. 5(A) and (B) are drawings that illustrate in simplified form thefourth embodiment of a semiconductor device manufacturing methodaccording to the present invention.

Whereas in the first through third embodiments of the present inventionan electrode terminal makes contact with the substrate W or with a filmthat is deposited thereupon, this being the means for applying eithercurrent or a potential, in the fourth embodiment a current or apotential is applied by a method that does not require contact with thesubstrate W or with a film that is deposited thereupon.

Specifically, for example, as shown in FIG. 5(A), a coil 50,is providedthat is wound in a direction that is parallel to the substrate holder 3,a current being caused to flow in the coil 50 by a power supply 51,thereby applying magnetic flux 52 in a direction that is perpendicularto the substrate W.

By doing this, an eddy current is developed within the surface of thesubstrate W, thereby encouraging the deposition of the film.

By controlling the magnetic flux to be applied, it is possible tocontrol the rate of film deposition, the crystal orientation, and graingrowth.

As shown in FIG. 5(B), by providing a coil 53 that is wound in adirection that is perpendicular to the substrate holder 3, a current iscaused to flow in the coil 53 by the power supply 51, thereby applyingmagnetic flux 54 in a direction that is perpendicular to the substrateW.

According to the fourth embodiment of the present invention, becausethere is no need for a mechanism to move a ring having electrodeterminals, the hardware is simplified and made smaller.

Also, because there is no need to consider such things as the contactcondition between the electrode terminals and the substrate W, it ispossible to achieve reliable application of either a current or apotential.

As mentioned above, the fourth embodiment of the present invention has acharacteristic feature such that the power supply means 51 comprises apower supply source 56 and a non-contact electric current supplyingmeans 50 which is connected to the power supply source means 56 andsupplying the current to the substrate W or the film F depositedthereupon, without making the current supplying means to be directlyconnected thereto.

More specifically, the semiconductor device manufacturing apparatus 100of this embodiment, has the non-contact electric current applying means50 comprises a coil means.

Note that, the power supply means 51 may further comprise a currentcontrolling means 57 which controls value of the current to be appliedto the coil 50 or 53, so as to control an current flowed through thesubstrate W or the film F deposited thereupon.

The present invention is not restricted to the above-describedembodiments, and can be the subject of variations which fall within thetechnical scope as set forth in the claims for the present invention.

The present invention can be applied not only to a copper film, but alsoto deposition of metal films such as Al, Au, Ag, Ti, and Ni, and ofinsulation films such as Parylene having polarity.

The present invention can also be applied to the formation of films thathave a polarity, such as strong dielectric films of strontium titanate,titanium oxide barium, BST, lead titanate, and the like, in which casethe deposited film is oriented in the direction of the electrical field,resulting in deposition of a film with uniform polarity.

The fifth embodiment of the present invention will be explainedhereunder.

Note that the fifth embodiment of the present invention is a method formanufacturing a semiconductor device utilizing the thermal CVD reaction.

As explained hereabove, and shown in FIG. 6, a semiconductor devicemanufacturing method for depositing a film on a substrate by a thermalCVD reaction of the present invention has a basic technical conceptionin that a film is deposited on a substrate while a current is applied tothe substrate or film deposited thereupon.

In the semiconductor device manufacturing method of the presentinvention, the film is deposited while the potential on the substrate orfilm deposited thereupon is arbitrarily set.

Further in the present invention, the film is deposited while theelectric current is applied to the substrate or the film depositedthereupon, intermittently.

On the other hand, the film may also be deposited on the substrate whileeither one of the voltage value and the current value is varied eitherintermittently or continuously, as shown in FIG. 7.

In the present invention, the film may further be deposited while adirection of the current flowed through the substrate or the filmdeposited thereupon, is changed, either intermittently or continuously.

In another aspect of the present invention, the film may be depositedwhile a temperature of the substrate or of the film deposited thereupon,is varied as well as either one of the voltage value and the currentvalue can be varied either intermittently or continuously.

In a further aspect of the present invention, the film is deposited onthe substrate while selling the potential of the substrate or filmdeposited thereupon to a ground potential, as shown in FIG. 8.

In a separate aspect of the present invention, a current or a potentialis applied to the substrate or film deposited thereupon without makingdirect contact with the substrate or film deposited thereupon and morespecifically, magnetic flux can be applied to the substrate or filmdeposited thereupon.

In one of the basic semiconductor device manufacturing methods of thepresent invention, the method comprises,

-   -   a step of depositing a film onto a substrate using a thermal CVD        reaction and    -   a step of depositing a film by using a thermal CVD reaction as a        current is applied to either one of the substrate and the        deposited film.

In more specific method of the present invention, it comprises, a stepof forming a trench on a semiconductor substrate, a step of depositing abarrier layer for the purpose of preventing film diffusion within thetrench, a step of depositing a film onto the barrier layer by using athermal CVD reaction, a step of depositing a film by using a thermal CVDreaction while applying either one of a current and a voltage to eitherone of the substrate and the deposited film, and a step of polishing thefilm and the barrier layer, so as to leave the film and barrier layerwithin the trench, so as to form a wire.

According to the present invention, by applying a current or a potentialto a substrate or to a film that is deposited onto the substrate, inaddition to a disproportionate reaction, a reduction reaction occurs,thereby encouraging the deposition of the film.

As a result, the time required for manufacture of the semiconductordevice is shortened, and the productivity is improved.

Because the present invention enables control of the crystal orientationin the deposited film, it enables deposition of a film with high qualityand uniform polarity.

Because the present invention enables control of the film grain growth,it improves the reliability of wires.

Additionally, because the present invention enables the potential of thesubstrate or the film deposited thereupon to be set to the groundpotential, it enables the achievement of a uniform potentialdistribution over the surface of the substrate, which can normally bedisturbed by, for example, electrostatic chucking, thereby improving theuniformity and repeatability of the deposited film.

1. A semiconductor device manufacturing method for depositing a film ona substrate by a thermal CVD reaction, wherein a raw material isvaporized to form a vapor phase deposition material, and said film isdeposited on said substrate while a d.c. electrical potential is appliedacross said substrate or film deposited thereupon, thereby orientingprecursor molecules of said vapor phase material in the direction of theelectrical field induced by said d.c. electrical potential.
 2. Asemiconductor device manufacturing method according to claim 1, whereinsaid film is deposited while the d.c. electrical potential on saidsubstrate or film deposited thereupon is arbitrarily set.
 3. Asemiconductor device manufacturing method according to claim 1, whereinsaid film is deposited while the d.c. electric potential is applied tosaid substrate or said film deposited thereupon, intermittently.
 4. Asemiconductor device manufacturing method according to claim 1, whereinsaid film is deposited while said d.c. electrical potential is variedeither intermittently or continuously.
 5. A semiconductor devicemanufacturing method according to claim 1, wherein said film isdeposited while a direction of said d.c. electrical potential applied tosaid substrate or said film deposited thereupon, is changed, eitherintermittently or continuously.
 6. A semiconductor device manufacturingmethod according to claim 1, wherein said film is deposited while atemperature of said substrate or of said film deposited thereupon, isvaried.
 7. A semiconductor device manufacturing method according toclaim 1, wherein either one of a voltage value or a potential value isvaried either intermittently or continuously.
 8. A semiconductor devicemanufacturing method according to claim 1, wherein said film isdeposited while setting the potential of said substrate or filmdeposited thereupon to a ground potential.
 9. A semiconductor devicemanufacturing method that uses a thermal CVD reaction to deposit a filmonto a substrate, said method comprising: vaporizing a raw material toform a vapor phase deposition material; and depositing a film by using athermal CVD reaction by applying a d.c. electrical potential acrosseither one of said substrate and said film deposited thereon, therebyorienting precursor molecules of said vapor phase material in thedirection of the electrical field induced by said d.c. electricalpotential.